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STL34NF06 数据表(PDF) 2 Page - STMicroelectronics

部件名 STL34NF06
功能描述  N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL34NF06 数据表(HTML) 2 Page - STMicroelectronics

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STL34NF06
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THERMAL DATA
(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t
≤ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case Max
1.8
°C/W
Rthj-pcb (#)
Thermal Resistance Junction-ambient Max
31.2
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
2V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID =17A
0.024
0.028
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =30V , ID = 17 A
TBD
S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
920
pF
Coss
Output Capacitance
225
pF
Crss
Reverse Transfer
Capacitance
80
pF



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