TS512 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

TS512

4/16

Electrical characteristics

Table 3.

VCC = ±15V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply current (per operator)

Tmin ≤ Tamb ≤T max

0.5

0.6

0.75

Iib

Input bias current

Tmin ≤ Tamb ≤T max

150

300

Rin

Input resistance, f = 1kHz

Vio

Input offset voltage

TS512

TS512A

Tmin ≤ Tamb ≤ Tmax

TS512

TS512A

0.5

2.5

0.5

3.5

1.5

ΔVio

Input offset voltage drift

Tmin ≤ Tamb ≤ Tmax

2µV/°C

Iio

Input offset current

Tmin ≤ Tamb ≤ Tmax

520

ΔIio

Input offset current drift

Tmin ≤ Tamb ≤ Tmax

0.08

Ios

Output short-circuit current

Avd

Large signal voltage gain

RL = 2kΩ, VCC = ±15V, Tmin ≤ Tamb ≤T max

VCC = ± 4V

100

GBP

Gain-bandwidth product, f = 100kHz

1.8

MHz

Equivalent input noise voltage, f = 1kHz

Rs = 50

Rs = 1k

Rs = 10k

THD

Total harmonic distortion

Av = 20dB, RL = 2kΩ

Vo = 2Vpp, f = 1kHz

0.03

±Vopp

Output voltage swing

RL = 2kΩ, VCC = ±15V, Tmin ≤ Tamb ≤T max

VCC = ± 4V

±13

±3

Vopp

Large signal voltage swing

RL = 10kΩ, f = 10kHz

Vpp

Slew rate

Unity gain, RL = 2kΩ

0.8

1.5

V/µs

CMR

Common mode rejection ratio

Vic = ±10V

° C

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