TS514 datasheet(4/10 Pages) STMICROELECTRONICS

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Electrical Characteristics

TS514 / TS514A

4/10

Electrical Characteristics

Table 3.

VCC = ±15V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

Icc

Supply Current

1.4

2.4

Iib

Input Bias Current

– at 25°C

–at Tmin ≤Top ≤Tmax

150

300

Input Resistance, f = 1kHz

Ω

Vio

Input Offset Voltage

– at 25°C:

TS514

TS514A

–at Tmin ≤Top ≤Tmax

TS514

TS514A

0.5

2.5

0.5

1.5

∆V

Input Offset Voltage Drift at Tmin ≤Top ≤Tmax

µV/°C

Iio

Input Offset Current

at 25°C

at Tmin ≤Top ≤Tmax

520

∆I

Input Offset Current Drift

Tmin ≤Top ≤Tmax

0.08

Ios

Output Short Circuit Current

Avd

Large Signal Voltage Gain, RL = 2kΩ

Vcc = ±15V

Vcc = ± 4V

100

GBP

Gain-bandwidth Product, f = 100kHz

1.8

MHz

Equivalent Input Noise Voltage, f = 1kHz

Rs = 50

Ω

Rs = 1k

Ω

Rs = 10k

Ω

THD

Total Harmonic Distortion

Av = 20dB, RL = 2kΩ, Vo = 2Vpp, f = 1kHz

0.03

0.1

±Vopp

Output Voltage Swing, RL = 2kΩ

Vcc = ±15V

Vcc = ± 4V

±13

±3

Vopp

Large Signal Voltage Swing, RL = 10kΩ, f = 10kHz

Vpp

Slew Rate, unity gain, RL = 2kΩ

0.8

1.5

µs

CMR

Common Mode Rejection Ratio, Vic = 10V

SVR

Supply Voltage Rejection Ratio, dVic = 10V, f = 100Hz

Vo1/Vo2 Channel Separation, f = 1kHz

120

° C

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