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STL9NK30Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL9NK30Z
功能描述  N-CHANNEL 300V - 0.36ohm - 9A PowerFLAT™ Zener-Protected SuperMESH™ Power MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL9NK30Z 数据表(HTML) 3 Page - STMicroelectronics

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STL9NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1mA, VGS = 0
300
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 4.5 A
0.36
0.4
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =10V, ID = 4.5 A
5.4
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
670
125
28
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 440 V
70
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3.6
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
VDD =150 V, ID = 4.5 A
RG = 4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
16
20
36
10
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =240V, ID =9 A,
VGS =10V
25
5.5
13.4
35
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
9
36
A
A
VSD (1)
Forward On Voltage
ISD = 9 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 9 A, di/dt = 100A/µs
VDD =40V, Tj = 150°C
(see test circuit, Figure 5)
165
0.9
11.2
ns
µC
A



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