STLC1 datasheet(5/16 Pages) STMICROELECTRONICS

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STLC1

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ELECTRICAL CHARACTERISTICS FOR LOW SIDE DRIVER SECTION (TJ=-40 to 125°C unless

otherwise specified. Typical values are referred at TJ=25°C, VB+=14V)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R(on)

Static drain to source LSD

N-channel switch on

resistance

VB+ =9V,

VTURN =VB+ VTR-L =0V

ITR-DRV=1A

500

Ω

VSTOP =VB+ VST-L =0V

IST-DRV=1A

500

Ω

VTAIL =VB+ VTL-L =0V

ITL-DRV=1A

500

Ω

ILSD(off)

OFF State LSD’S leakage

current

VTURN =VSTOP =VTAIL =0V

VTR-DRV =VST-DRV =VTL-DRV =VB+

µA

tLSD-ON

LSD Turn On Delay

CREF =1µFCOUT = 220µF

(see note 2,4 and Fig 1, 2)

2ms

VLS-ON

FDBK Voltage over which

LSD’s are enabled

0.95VFB

VLS-OFF

FDBK Voltage over which

LSD’s are disabled

0.5VFB

fLSD

Pulse Width Controller

Internal Oscillator

Frequency

VTAIL =VB+ VTS-PWM =VREF/2

200

380

500

VIN(ON)

Input Threshold voltage to

enable LSD

VB+ = 9 to 16V

0.6VB+

VIN(OFF)

Input Threshold voltage to

disable LSD

VB+ = 9 to 16V

0.4VB+

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