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TSC888 数据表(PDF) 4 Page - STMicroelectronics |
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TSC888 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Electrical characteristics TSC888 4/7 3 Electrical characteristics The electrical characteristics given in the following tables are measured under the following test conditions unless otherwise specified: Tamb=25°C, Vcc=5V, Vsense=Vp-Vm=50mV, Vm=12V, no load on Out Table 4. Supply Symbol Parameter Test conditions Min. Typ. Max. Unit ICC Total supply current Vsense = 0 1 mA Table 5. Input Symbol Parameter Test conditions Min. Typ. Max. Unit CMR DC common mode rejection Variation of Vout versus Vicm referred to input 2.8V< Vicm < 24V Vsense= 30mV 95 dB SVR Supply voltage rejection Variation of Vout versus Vcc referred to input 4.0V< VCC < 24V Vsense= 30mV 95 dB Ilk Input leakage current Vcc=0V 1 µA Iib Input bias current Vsense=0V 5.5 8 µA Table 6. Output Symbol Parameter Test conditions Min. Typ. Max. Unit Av Gain TSC888A TSC888B TSC888C 20 50 100 V/V ΔVout Total output voltage accuracy ±6 % Isc Short-circuit current OUT connected to VCC or GND 2mA VOH Output stage high-state saturation voltage VOH=VCC-Vout Vsense=1V Iout=1mA 0.8 1 V VOL Output stage low-state saturation voltage Vsense=-1V Iout=1mA 50 100 mV |
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