TSH344_07 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

TSH344

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Electrical characteristics

Table 3.

VCC = +5V single supply, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

DC performance

VOS

Output offset voltage(1)

No load, Tamb

-35

-8

+35

-40°C < Tamb < +85°C

-8.6

Iib

Input bias current

Tamb, input to GND

5.5

μA

-40°C < Tamb < +85°C

Rin

Input resistance

Tamb

Cin

Input capacitance

Tamb

1pF

PSRR

Power supply rejection ratio

20 log (

ΔV

CC/ΔVout)

(2)

Input to GND, F=1MHz,

ΔV

CC=200mV

-90

ICC

Supply current per buffer

No load, input to GND

10.1

-40°C < Tamb < +85°C

10.3

DC voltage gain

RL = 150Ω, Vin=1V

1.92

2.05

V/V

MG1

Gain matching between 3 channels Input = 1V

0.5

MG0.3

Gain matching between 3 channels Input = 0.3V

0.5

Dynamic performance and output characteristics

-3dB bandwidth

Small signal Vout=20mVp

Vicm=0.6V, RL = 150Ω

190

340

MHz

Gain flatness @ 0.1dB

Small signal Vout=20mVp

Vicm=0.6V, RL = 150Ω

FPBW

Full power bandwidth

Vicm=0.6V, Vout = 2Vp-p,

RL = 150Ω

130

200

MHz

Delay between each channel

0 to 30MHz

0.5

Slew rate (3)

Vicm=0.6V, Vout = 2Vp-p,

RL = 150Ω

500

740

μs

VOH

High level output voltage

RL = 150Ω

3.7

3.9

VOL

Low level output voltage

RL = 150Ω

IOUT

Output current

Vout= 2Vp, Tamb

-40°C < Tamb < +85°C

Output short circuit current

(Isource)

100

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