JS28F128P30B85 datasheet(39/99 Pages) NUMONYX

39 / 99 page

November 2007

Datasheet

Order Number: 306666-11

P30

Note:

WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0, Wait asserted low).

7.5

Program and Erase Characteristics

Figure 24: Write-to-Synchronous Read Timing

Table 20:

Num

Symbol

Parameter

VPPL

VPPH

Units

Notes

Min

Typ

Max

Min

Typ

Max

Conventional Word Programming

W200

tPROG/W

Program

Time

Single word - 130nm

200

190

µs

Single word - 65nm

125

150

125

150

Single cell

Buffered Programming

W200

tPROG/W

Program

Time

Single word

200

190

µs

W251

tBUFF

32-word buffer

440

880

340

680

Buffered Enhanced Factory Programming

W451

tBEFP/W

Program

Single word

n/a

µs

1,2

W452

tBEFP/Setup

BEFP Setup

n/a

Erasing and Suspending

R304

R305

R304

R307

R15

W20

W19

W18

R11

R303

R11

R104

R106

R104

R306

R302

R301

CLK

Address [A]

ADV#

CE# [E}

WE# [W]

OE# [G]

WAIT [T]

Data [D/Q]

RST# [P]

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