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STLED316SMTR 数据表(PDF) 18 Page - STMicroelectronics |
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STLED316SMTR 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 33 page ![]() Key matrix and key-input data storage ram STLED316S 18/33 7 Key matrix and key-input data storage ram During the key scan cycle all the grids are turned off. The first segments turn on is 64 µs. The key1 and key2 signals will be sampled after 60 µs. The two signals latch into the internal key buffer. The same applies for other segments. This key buffer compares the data with the previous key status. If any changes are seen in the buffer values, then the IRQ_N is asserted. The IRQ_N signal is active low (level). This IRQ_N signal will be cleared at the end of reading the key buffer (end of byte transfer). The key buffer must be completely read before the IRQ_N is cleared. The key matrix is of 8 x 2 configuration, as shown below: Figure 4. Key matrix The data of each key are stored as illustrated below, and are read by the appropriate read command, starting from the least significant bit. 1st byte 2nd byte The initial key buffer value is “00”. During operation, the buffer values will change depending upon the values of the key-press. KEY1 KEY1 KEY1 KEY1 KEY1 KEY1 KEY1 KEY1 SEG1/KS1 SEG2/KS2 SEG3/KS3 SEG4/KS4 SEG5/KS5 SEG6/KS6 SEG7/KS7 SEG8/KS8 LSB MSB KEY2 KEY2 KEY2 KEY2 KEY2 KEY2 KEY2 KEY2 SEG1/KS1 SEG2/KS2 SEG3/KS3 SEG4/KS4 SEG5/KS5 SEG6/KS6 SEG7/KS7 SEG8/KS8 LSB MSB |
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