STN1N20 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STN1N20

功能描述	N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STN1N20

N - CHANNEL 200V - 1.2

Ω - 1A - SOT-223

POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.2

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

SOT-223 CAN BE WAVE OR REFLOW

SOLDERED

s

AVAILABLE IN TAPE AND REEL ON

REQUEST

s

150

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HARD DISK DRIVERS

s

SMALL MOTOR CURRENT SENSE

CIRCUITS

s

DC-DC CONVERTERS AND POWER

SUPPLIES

®

INTERNAL SCHEMATIC DIAGRAM

September 1999

1

2

3

SOT-223

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Un it

VDS

Drain-source Volt age (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Voltage

± 20

V

ID(*)

Drain Current (continuous) at Tc =25

oC1

A

ID(*)

Drain Current (continuous) at Tc =100

oC

0.6

A

IDM(

•)

Drain Current (pulsed)

4

A

Ptot

T otal Dissipation at Tc =25

oC

2.9

W

Derating Fact or

0.023

W /

o C

Tstg

Storage T emperature

-65 t o 150

o C

Tj

Max. Operating Junction Temperat ure

150

o C

(

•) Pulse width limited by safe operating area

(*) Limite d by package

TYPE

VDSS

RDS(on)

IDCONT

STN1N20

200 V

< 1.5

Ω

1A

1/6

类似零件编号 - STN1N20

制造商	部件名	数据表	功能描述
STMicroelectronics	STN1N20	515Kb / 12P	N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET 27-Jun-2011
STMicroelectronics	STN1N20	515Kb / 12P	N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET 27-Jun-2011

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