STN1NB80 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STN1NB80

功能描述	N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STN1NB80

N - CHANNEL 800V - 16

Ω - 0.2A - SOT-223

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) =16

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

AC ADAPTORS AND BATTERY CHARGERS

FOR HANDHELD EQUIPMENT

INTERNAL SCHEMATIC DIAGRAM

November 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC0.2

A

ID

Drain Current (continuous) at Tc =100

oC0.12

A

IDM (

•)

Drain Current (pulsed)

0.8

A

Ptot

T otal Dissipation at Tc =25

oC2.9

W

Derating Factor

0.02

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 0.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST N1NB80

800 V

< 20

Ω

0.2 A

SOT-223

®

1

2

3

类似零件编号 - STN1NB80

制造商	部件名	数据表	功能描述
STMicroelectronics	STN1N20	45Kb / 6P	N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR Sep-1999
	STN1N20	515Kb / 12P	N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET 27-Jun-2011
	STN1N20	515Kb / 12P	N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET 27-Jun-2011
	STN1NC60	255Kb / 8P	N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh™ I MOSFET Feb-2001
	STN1NF10	268Kb / 8P	N-CHANNEL 100V - 0.7ohm - 1A SOT-223 STripFET™ II POWER MOSFET Oct-2001

More results

类似说明 - STN1NB80

制造商	部件名	数据表	功能描述
STMicroelectronics	STB5NB80	87Kb / 8P	N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET Mar-1999
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