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STN1NF10 数据表(PDF) 3 Page - STMicroelectronics |
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STN1NF10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STN1NF10 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 0.5 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 4 5.5 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 50 V ID= 1 A VGS= 10 V 4 1 1.5 6nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 0.5 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 13 6.5 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 1 4 A A VSD (*) Forward On Voltage ISD = 1 A VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1 A di/dt = 100A/µs VDD = 20 V Tj = 150°C (see test circuit, Figure 5) 45 60 2.7 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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