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STN2NE06 数据表(PDF) 1 Page - STMicroelectronics |
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STN2NE06 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() STN2NE06 N-CHANNEL 60V - 0.18 Ω - 2A - SOT-223 STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.18 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size ™” stip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM April 1999 1 2 2 3 SOT-223 TYPE VDSS RDS(on) ID STN2NE06 60 V < 0.25 Ω 2A ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit VDS Drain-source Volt age (VGS =0) 60 V VDGR Drain- gate Voltage (RGS =20 k Ω)60 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 oC2 A ID Drain Current (continuous) at Tc =100 oC1.3 A IDM( •) Drain Current (pulsed) 8 A Ptot Tot al Dissipation at Tc =25 oC2.5 W Derating F act or 0.02 W / oC dv/ dt(1 ) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage T emperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX 1/8 |
类似零件编号 - STN2NE06 |
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类似说明 - STN2NE06 |
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