STN2NE10 datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STN2NE10

功能描述	N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STN2NE10

N - CHANNEL 100V - 0.33

Ω - 2A - SOT-223

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.33

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

AVALANCHE RUGGED TECHNOLOGY

s

100 % AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

"Single

Feature

Size

™ " stip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL (DISK DRIVES,etc.)

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

®

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

RDS(on)

ID

STN2NE10

100 V

< 0.4

Ω

2 A

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

100

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

o C2

A

ID

Drain Current (continuous) at Tc = 100

oC1.3

A

IDM(

•)

Drain Current (pulsed)

8

A

Ptot

Total Dissipation at Tc = 25

oC2.5

W

Derating Factor

0.02

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

New RDS (on) spec. starting from JULY 98

1

2

3

SOT-223

1/5

类似零件编号 - STN2NE10

制造商	部件名	数据表	功能描述
STMicroelectronics	STN2NE10L	85Kb / 8P	N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET Mar-2000
STMicroelectronics	STN2NE10L	235Kb / 12P	N-channel 100V - 0.33??-2A - SOT-223 01-Feb-2007
VBsemi Electronics Co.,...	STN2NE10LA	977Kb / 6P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STN2NE10L	235Kb / 12P	N-channel 100V - 0.33??-2A - SOT-223 01-Feb-2007

More results

类似说明 - STN2NE10

制造商	部件名	数据表	功能描述
STMicroelectronics	STN1NF10	268Kb / 8P	N-CHANNEL 100V - 0.7ohm - 1A SOT-223 STripFET™ II POWER MOSFET Oct-2001
	STN2NE06	84Kb / 8P	N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET Apr-1999
	STN2NE10L	85Kb / 8P	N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET Mar-2000
	STN2NF06	105Kb / 9P	N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET Jul-1998
	STN2NF06L	290Kb / 8P	N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET??II POWER MOSFET Nov-2002
	STN2NF10	259Kb / 8P	N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET??II POWER MOSFET Dec-2001
	STN4NE03	91Kb / 8P	N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER MOSFET Aug-1998
	STN7NF10	274Kb / 8P	N-CHANNEL 100V - 0.055 ohm - 5A SOT-223 LOW GATE CHARGE STripFET™ II POWER MOSFET Dec-2002
	STN2NE10L	235Kb / 12P	N-channel 100V - 0.33??-2A - SOT-223 01-Feb-2007
	STN2NF10	248Kb / 13P	N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET 04-Apr-2007

More results

STN2NE10 数据表(PDF) 1 Page - STMicroelectronics

STN2NE10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STN2NE10

类似说明 - STN2NE10

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STN2NE10 数据表(PDF) 1 Page - STMicroelectronics

STN2NE10 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STN2NE10

类似说明 - STN2NE10

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