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STN3PF06 数据表(PDF) 1 Page - STMicroelectronics |
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STN3PF06 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() 1/6 PRELIMINARY DATA January 2001 STN3PF06 P-CHANNEL 60V - 0.18 Ω - 3A SOT-223 STripFET™ II POWER MOSFET (1)ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. s TYPICAL RDS(on) = 0.18Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s LOW THRESHOLD DRIVE DESCRIPTION This Power Mosfet is the latest development of STMi- croelectronics unique “Single Feature Size ™” strip- based process. The resulting transistor shows ex- tremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufactur- ing reproducibility. APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and current has to be reversed TYPE VDSS RDS(on) ID STN3PF06 60V <0.20 Ω 2.5A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 2.5 A ID Drain Current (continuos) at TC = 100°C 1.5 A IDM (q) Drain Current (pulsed) 10 A PTOT Total Dissipation at TC = 25°C 2.5 W Derating Factor 0.02 W/°C dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 150 °C SOT-223 1 2 2 3 INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - STN3PF06 |
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类似说明 - STN3PF06 |
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