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THBT15011D 数据表(PDF) 5 Page - STMicroelectronics |
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THBT15011D 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() THBT15011, THBT20011, THBT27011 Characteristics 5/10 Figure 5. Test circuit 2 for IH parameter Figure 6. Test circuit 3 for VBO parameters TEST PROCEDURE 1/ Adjust the current level at the I value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current H ➔ I= 10 A,10/1000 µs. 3/ The D.U.T. will come back off-state within 50 ms maximum. PP This is a GO - NO GO test which allows confirmation of the holding current (I ) level in a functional test circuit. H R V BAT = - 48 V Surge generator D.U.T CC R R TIP RING GND VP 4 3 2 R2 R1 L 1 (V is defined in no load condition) P Table 6. Parameters for selected pulse characteristics Pulse (µs) Vp (V) C1 (µF) C2 (nF) L (µH) R1 ( Ω) R2 ( Ω) R3 ( Ω) R4 ( Ω) IPP (A) Rp ( Ω) tr tp 10 700 1500 20 200 0 50 15 25 25 30 10 1.2 50 1500 1 33 0 7613 2525 3010 2 10250010 0 1.1 1.3 0 3 3 38 62 |
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