THBT15011DRL datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

THBT15011, THBT20011, THBT27011

4/10

Figure 4.

Test circuit 1 for IBO and VBO parameters

Table 5.

Dynamic breakover voltages (transversal mode)

Type

Symbol

Test conditions(1)

Max

Unit

THBT15011D

VBO

10/700

μs

1.2/50

μs

2/10

μs

1.5kV

2.5kV

Rp=10

Rp=62

IPP=30A

IPP=38A

190

200

THBT20011D

VBO

10/700

μs

1.2/50

μs

2/10

μs

1.5kV

2.5kV

Rp=10

Rp=62

IPP=30A

IPP=38A

270

280

THBT27011D

VBO

10/700

μs

1.2/50

μs

2/10

μs

1.5kV

2.5kV

Rp=10

Rp=62

IPP=30A

IPP=38A

360

400

See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.

220V 50Hz

1/4

R1 = 140

R2 = 240

ton = 20ms

IBO

measurement

VBO

measurement

Vout

DUT

TEST PROCEDURE

Pulse test duration (tp = 20ms):

selection:

●

for Bidirectional devices = Switch K is closed

for Unidirectional devices = Switch K is open

Device with V

< 200 V

= 250 V

, R1 = 140

OUT

RMS

➔

Device with V

200 V

= 480 V

, R2 = 240

OUT

RMS

➔

≥

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