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STN4NF03L 数据表(PDF) 1 Page - STMicroelectronics |
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STN4NF03L 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() 1/8 December 2002 STN4NF03L N-CHANNEL 30V - 0.039 Ω -6.5A SOT-223 STripFET™ II POWER MOSFET (1) Starting Tj=25°C, ID=6.5A, VDD=15V s TYPICAL RDS(on) = 0.039Ω s LOW THRESHOLD DRIVE DESCRIPTION This Power Mosfet is the latest development of STMi- croelectronics unique “Single Feature Size™ ” strip- based process. The resulting transistor shows ex- tremely high packing density for low on-resistance, rugged avalance characteristics and less critical align- ment steps therefore a remarkable manufacturing re- producibility. APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STN4NF03L 30V <0.05 Ω 6.5A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain-gate Voltage (RGS =20kΩ) 30 V VGS Gate- source Voltage ±16 V ID Drain Current (continuous) at TC = 25°C 6.5 A ID Drain Current (continuous) at TC = 100°C 4.5 A IDM ( ) Drain Current (pulsed) 26 A PTOT Total Dissipation at TC = 25°C 3.3 W Derating Factor 0.026 W/°C EAS (1) Single Pulse Avalanche Energy 200 mJ Tstg Storage Temperature –55 to 175 °C Tj Operating Junction Temperature SOT-223 1 2 2 3 INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - STN4NF03L |
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类似说明 - STN4NF03L |
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