STN749 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-amb

• Thermal Resistance Junction-Ambient

Max

oC/W

• Device mounted on a PCB area of 1 cm2 .

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

Tj = 100

-100

-10

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -4 V

-100

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

-25

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -100

µA

-35

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -100

µA

-5

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -1A

IB = -100 mA

IC = -3A

IB = -300 mA

-0.3

-0.6

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -1 A

IB = -100 mA

-1.25

VBE(on)

Base-Emitter Turn-On

Voltage

IC = -1 A

VCE = -2 V

-1

hFE

∗

DC Current Gain

IC = -50 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -2 A

VCE = -2 V

IC = -6 A

VCE = -2V

100

300

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

STN749

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