STN851 datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

Rthj-amb

Thermal Resistance Junction-ambient

Max

oC/W

• Device mounted on a P.C.B. area of 1 cm2

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 120 V

Tj = 100

o C

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 100

µA

150

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 100

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 100 mA

IB = 5 mA

IC = 1 A

IB = 50 mA

IC = 2 A

IB = 50 mA

IC = 5 A

IB = 200 mA

140

320

120

250

500

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 4 A

IB = 200 mA

1.15

VBE(on)

∗ Base-Emitter On

Voltage

IC = 4 A

VCE = 1 V

0.89

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 1 V

IC = 2 A

VCE = 1 V

IC = 5 A

VCE = 1 V

IC = 10 A

VCE = 1 V

150

300

270

140

350

Transition frequency

VCE = 10 V

IC = 100 mA

130

MHz

CCBO

Collector-Base

Capacitance

VCB = 10 V

f = 1 MHz

ton

RESISTIVE LOAD

Turn- on Time

Storage Time

Fall Time

IC = 1 A

VCC = 10 V

IB1 = - IB2 = 0.1 A

1.35

120

µs

* Pulsed: Pulse duration = 300

µs, duty cycle = 1.5 %

STN851

2/7

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