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STP100NF04L 数据表(PDF) 1 Page - STMicroelectronics |
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STP100NF04L 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() 1/8 February 2002 . STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.0036 Ω s LOW THRESHOLD DRIVE s 100% AVALANCHE TESTED s LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS TYPE VDSS RDS(on) ID STP100NF04L 40 V <0.0042 Ω 100 A 1 2 3 TO-220 ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (*) Current Limited by package (1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX (2) Starting Tj = 25 oC, IAR = 50A, VDD= 30V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 40 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 40 V VGS Gate- source Voltage ± 16 V ID(*) Drain Current (continuos) at TC = 25°C 100 A ID Drain Current (continuos) at TC = 100°C 70 A IDM(•) Drain Current (pulsed) 400 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3.6 V/ns EAS (2) Single Pulse Avalanche Energy 1.4 J Tstg Storage Temperature -65 to 175 °C Tj Max. Operating Junction Temperature 175 °C INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - STP100NF04L |
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类似说明 - STP100NF04L |
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