STP10NB20FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP10NB20FP

功能描述	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP10NB20

STP10NB20FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.3

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

November 1997

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

ST P10NB20

STP10NB20FP

VDS

Drain-source Voltage (VGS =0)

200

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

200

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC10

6

A

ID

Drain Current (continuous) at Tc =100

oC6

4

A

IDM(

•)

Drain Current (pulsed)

40

A

Ptot

Tot al Dissipation at Tc =25

oC85

30

W

Derating Factor

0.68

0.24

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

5.5

V/ ns

VISO

Insulat ion W it hst and Voltage (DC)

2000

V

Tstg

Storage T emperat ure

-65 t o 150

oC

Tj

Max. O perating Junction T emperat ure

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP10NB20

STP10NB20F P

200 V

<0.40

Ω

<0.40

Ω

10 A

6A

1/9

类似零件编号 - STP10NB20FP

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP10NB20FP	318Kb / 2P	isc N-Channel MOSFET Transistor

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