STP11NB40 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP11NB40

功能描述	N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP11NB40

STP11NB40FP

N - CHANNEL 400V - 0.48

Ω - 10.7A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.48

Ω

s

EXTREMELY HIGH dV/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

September 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST P11NB40

STP11NB40F P

VDS

Drain-source Voltage (VGS =0)

400

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

400

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC

10.7

6.0

A

ID

Drain Current (continuous) at Tc =100

oC6.7

3.8

A

IDM (

•)

Drain Current (pulsed)

42.8

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating Factor

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 10.7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P11NB40

ST P11NB40FP

400 V

<0. 55

Ω

<0. 55

Ω

10.7 A

6.0 A

1/9

类似零件编号 - STP11NB40

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP11NB40	371Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP11NB40FP	1Mb / 8P	Power MOSFET
Inchange Semiconductor ...	STP11NB40FP	318Kb / 2P	isc N-Channel MOSFET Transistor

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类似说明 - STP11NB40

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