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ESDA18-1F2 数据表(PDF) 2 Page - STMicroelectronics |
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ESDA18-1F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics ESDA18-1F2 2/8 1 Characteristics Table 1. Absolute ratings (limiting value, per diode) Symbol Parameter and test conditions Value Unit PPP Peak pulse power dissipation 10 / 1000 µs pulse Tj initial = Tamb 100 W Peak pulse power dissipation 8 / 20 µs pulse 700 IFSM Non repetitive surge peak forward current tp=10 ms Tj initial = Tamb 8A Tj Maximum operating junction temperature 125 °C Tstg Storage temperature range - 65 to + 175 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VBR Breakdown voltage IRM Leakage current VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current C Capacitance Order number VBR IR IRM VRM VCL IPP (1) 1. 8 / 20 µs pulse waveform. VF (2) 2. A DC current is not recommended for more than 5 sec. Even if Transil failure mode is short circuit the bumps could exceed melting temperature and the component disassembled from the board. αTC min. max. max. max. max. max. typ. IF = 850 mA VR=0 V VV mA µA V V A V 10-4/°C pF ESDA18-1F2 16 18 1 0.5 10 20 1 1.3 8.5 230 V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd |
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