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EMIF01-1003M3 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF01-1003M3 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Characteristics EMIF01-1003M3 2/10 1 Characteristics Table 1. Absolute ratings (limiting values at Tamb = 25° C unless otherwise specified) Symbol Parameter Value Unit VPP ESD discharge IEC61000-4-2 air discharge on input and output pins ESD discharge IEC61000-4-2 contact discharge on input and output pins 15 8 kV Tj Junction temperature 125 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -55 to +150 °C Table 2. Electrical characteristics (Tamb = 25° C) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic resistance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 5 6.5 8 V IRM VRM = 3 V per line 100 nA RI/O Tolerance ± 10% 100 Ω Cline VR= 0 VDC, VOSC = 30 mV, F = 1 MHz 30 39 pF S21 F = 900 MHz -25 dB VBR IPP VRM VF IF I IRM IR V VCL |
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