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ESDAULC6-3BP6 数据表(PDF) 2 Page - STMicroelectronics |
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ESDAULC6-3BP6 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics ESDAULC6-3BP6, ESDAULC6-3BF2 2/11 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value (min.) Unit VPP Peak pulse voltage (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge 15 15 kV Tj Maximum operating junction temperature 150 °C Tstg Storage temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s at 5 mm for case 260 °C Table 3. Electrical characteristics (Tamb = 25° C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient C Capacitance Rd Dynamic resistance Parameter Test condition Min Typ Max Unit VBR (1) 1. Same value for I/O to I/O and I/O to GND IR = 1 mA 6.0 9.2 V IRM VRM = 5 V 0.5 µA Rd Square pulse, IPP = 6 A, tp = 2.5 µs 1.4 Ω αT 1.2 10-4/°C Ci/o-i/o VI/O = 0 V, F = 1 MHz, VOSC = 30 mV SOT-666 1.0 1.25 pF Flip-Chip 1.25 1.5 VI/O = 1.65 V, VCC = 4.3 V, F = 1 MHz, VOSC = 400 mV SOT-666 0.75 0.9 Flip-Chip 0.9 1.20 V I VCL VCL VBR VBR VRM VRM IRM IPP Slope: 1/Rd |
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