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EMIF02-MIC03F2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF02-MIC03F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() EMIF02-MIC03F2 2/6 ® ABSOLUTE RATINGS (limiting values) ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) Symbol Parameter and test conditions Value Unit Tj Maximum junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to 150 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 8 V IRM VRM = 3 V per line 500 nA RI/O Tolerance ± 20 % 68 Ω Cline VR = 0 V 100 pF Fig. 1: S21 (dB) attenuation measurements and Aplac simulation. Fig. 2: Analog crosstalk measurements. 100.0k 1.0M 10.0M 100.0M 1.0G -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 dB f/Hz 100.0k 1.0M 10.0M 100.0M 1.0G -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 dB f/Hz 100.0k 1.0M 10.0M 100.0M 1.0G -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 dB f/Hz 100.0k 1.0M 10.0M 100.0M 1.0G -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 dB f/Hz I V IPP VCL VBR VRM IR IRM IRM IR IPP VRM VBR VCL |
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