STP11NM60AFP datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

STP11NM60A/STP11NM60AFP/STB11NM60A-1

2/11

ABSOLUTE MAXIMUM RATINGS

(

l) Pulse width limited by safe operating area

(1) ISD ≤11A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

ON/OFF

Symbol

Parameter

Value

Unit

STP11NM60A

STB11NM60A-1

STP11NM60AFP

VDS

Drain-source Voltage (VGS = 0)

600

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

VGS

Gate- source Voltage

± 30

Drain Current (continuous) at TC = 25°C

11 (*)

Drain Current (continuous) at TC = 100°C

7 (*)

IDM (l)

Drain Current (pulsed)

44 (*)

PTOT

Total Dissipation at TC = 25°C

110

Derating Factor

0.88

0.28

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

VISO

Insulation Withstand Voltage (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220 / I2PAK

TO-220-FP

Rthj-case

Thermal Resistance Junction-case Max

1.13

3.57

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

600

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 5.5 A

0.4

0.45

Ω

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