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ESDA6V1SC6 数据表(PDF) 4 Page - STMicroelectronics

部件名 ESDA6V1SC6
功能描述  Quad Transil array for ESD protection
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESDA6V1SC6 数据表(HTML) 4 Page - STMicroelectronics

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Application information
ESDAxxSCx
4/11
2
Application information
2.1
Calculation of the clamping voltage use of the dynamic
resistance
The ESDA family has been designed to clamp fast spikes like ESD. Generally the PCB
designers need to calculate easily the clamping voltage V
CL. This is why we give the
dynamic resistance in addition to the classical parameters. The voltage across the
protection cell can be calculated with the following formula:
V
CL = VBR + Rd IPP
Where I
PP is the peak current through the ESDA cell.
As the value of the dynamic resistance remains stable for a surge duration lower than 20 µs,
the 2.5 µs rectangular surge is well adapted. In addition both rise and fall times are
optimized to avoid any parasitic phenomenon during the measurement of R
d.
2.2
Dynamic resistance measurement
The short duration of the ESD has led us to prefer a more adapted test wave, as below
defined, to the classical 8/20µs and 10/1000 µs surges.
Figure 9.
2.5 µs duration measurement wave
Figure 7.
Relative variation of leakage
current versus junction
temperature (typical values)
Figure 8.
Peak forward voltage drop versus
peak forward current
(typical values)
25
50
75
100
125
1
10
100
500
ESDA14V2SC5/SC6
&
ESDA6V1SC5/SC6
ESDA5V3SC5/SC6
ESDA25SC6
ESDA17SC6
&
ESDA19SC6
T (°C)
j
I [T ] / I [T =25°C]
Rj
Rj
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
0.10
1.00
5.00
ESDA25SC6
ESDA17SC6
ESDA5V3SC5/SC6
ESDA14V2SC5/SC6
&
ESDA6V1SC5/SC6
ESDA19SC6
I
(A)
FM
V
(V)
FM
T = 25°C
j
2µs
tp = 2.5µs
t
I
Ipp



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