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STP11NM80 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP11NM80
功能描述  N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP11NM80 数据表(HTML) 3 Page - STMicroelectronics

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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
800
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID =5.5 A
0.35
0.40
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 7.5 A
8
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
1630
750
30
pF
pF
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2.7
Ω
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 400 V, ID = 5.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 4)
22
17
46
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V, ID = 11 A,
VGS = 10V
43.6
11.6
21
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
11
44
A
A
VSD (1)
Forward On Voltage
ISD = 11 A, VGS = 0
0.86
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see test circuit, Figure 5)
612
7.22
23.6
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 5)
970
11.25
23.2
ns
µC
A



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