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EMIF08-VID01C2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF08-VID01C2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Characteristics EMIF08-VID01C2 2/6 1 Characteristics Figure 1. Basic cell configuration Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit Vpp ESD discharge IEC 61000-4-2 air discharge ESD discharge IEC 61000-4-2 contact discharge 15 8 kV kV Tj Maximum junction temperature 125 °C Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C Table 2. Electrical characteristics (Tamb = 25° C) Symbol Parameters VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage R Series resistance between input and output Cline Input capacitance per line Symbol Test conditions Min Typ Max Unit VBR IR = 1 mA 6 8 10 V IRM VRM = 3 V per line 500 nA RI/O I = 10 mA 80 100 120 Ω Cline VR = 3 V DC, 1 MHz 16 19 pF R R = 100 Cline = 16 pF typ. @ 3 V Ω Input Output V I I RM V RM V BR V I I RM V RM V BR |
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