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EMIF08-VID01F2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF08-VID01F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() 1 Electrical characteristics (Tamb = 25°C) EMIF08-VID01F2 2/6 Figure 1. Basic cell configuration 1 Electrical characteristics (Tamb = 25°C) Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit Vpp ESD discharge IEC61000-4-2 air discharge ESD discharge IEC61000-4-2 contact discharge 15 8 kV KV Tj Maximum junction temperature 125 °C Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C Symbol Parameters VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage R Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min Typ Max Unit VBR IR = 1mA 68 10 V IRM VRM = 3V per line 500 nA RI/O I=10mA 80 100 120 Ω Cline VR = 3V DC, 1 MHz 16 19 pF R R R R R R R R = 100 Cline = 16 pF typ. @ 3 V Ω Input Output V I I RM V RM V BR V I I RM V RM V BR |
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