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EMIF10-LCD01F2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF10-LCD01F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics EMIF10-LCD01F2 2/8 1 Characteristics : Table 1. Absolute Maximum Ratings (Tamb = 25° C) Symbol Parameter Value Unit Tj Junction temperature 125 ° C Top Operating temperature range -40 to + 85 ° C Tstg Storage temperature range -55 to +150 ° C Table 2. Electrical Characteristics (Tamb = 25° C) Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic resistance IPP Peak pulse current RI/O Series resistance between Input and Output Cline Input capacitance per line I V IF IRM IR IPP VRM VF VBR VCL Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 8 10 V IRM VRM = 3 V 500 nA RI/O 90 100 110 Ω Cline @ 0 V bias 28 35 pF Rt / Ft Induced rise and fall time 10-90% at 26 MHz frequency signal V = 1.9 V (Rt / Ft input 1 ns, 50 Ω impedance generator) 8(1) ns 1. guaranteed by design Figure 3. S21(dB) attenuation measurement Figure 4. Analog cross talk measurement -50 -40 -30 -20 -10 0 0.1 M 1.0 M 10.0 M 100.0 M 1.0 G 10.0 G dB F(Hz) dB 0.1 M 1.0 M 10.0 M 100.0 M 1.0 G 10.0 G -90 -70 -50 -30 -10 10 F(Hz) |
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