数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STP12NM50FD 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP12NM50FD
功能描述  N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP12NM50FD 数据表(HTML) 2 Page - STMicroelectronics

  STP12NM50FD Datasheet HTML 1Page - STMicroelectronics STP12NM50FD Datasheet HTML 2Page - STMicroelectronics STP12NM50FD Datasheet HTML 3Page - STMicroelectronics STP12NM50FD Datasheet HTML 4Page - STMicroelectronics STP12NM50FD Datasheet HTML 5Page - STMicroelectronics STP12NM50FD Datasheet HTML 6Page - STMicroelectronics STP12NM50FD Datasheet HTML 7Page - STMicroelectronics STP12NM50FD Datasheet HTML 8Page - STMicroelectronics STP12NM50FD Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 14 page
background image
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
2/14
ABSOLUTE MAXIMUM RATINGS
(
l) Pulse width limited by safe operating area
(1) ISD ≤12A, di/dt ≤ 400 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
TO-220 /
D2PAK / I2PAK
TO-220FP
TO-247
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
12
12 (*)
14
A
ID
Drain Current (continuous) at TC = 100°C
7.5
7.5 (*)
8.8
A
IDM (l)
Drain Current (pulsed)
48
48 (*)
56
A
PTOT
Total Dissipation at TC = 25°C
160
35
175
W
Derating Factor
1.28
0.28
1.4
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
- 65 to 150
- 65 to 150
°C
°C
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
0.78
3.57
0.715
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
30
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
6A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
400
mJ



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com