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STP14NF06 数据表(PDF) 3 Page - STMicroelectronics |
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STP14NF06 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STP14NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 30V, ID = 7 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 12.5 ns tr Rise Time 32 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48 V, ID = 14 A, VGS = 10V 11.2 3.7 3.2 15 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30 V, ID = 7 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 30 9.5 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 14 A ISDM (1) Source-drain Current (pulsed) 56 A VSD (2) Forward On Voltage ISD = 14 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5) 38 61 3.2 ns nC A Safe Operating Area Thermal Impedence |
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