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STP14NF12 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP14NF12
功能描述  N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP14NF12 数据表(HTML) 3 Page - STMicroelectronics

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STP14NF12/STP14NF12FP
Safe Operating Area For TO-220
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =50 V,ID =7 A
RG = 4.7Ω VGS =10V
(Resistive Load, see Figure 3)
16
ns
tr
Rise Time
25
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80 V,ID =14A,
VGS =10V
15.5
3.7
4.7
21
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD =50 V,ID =7 A,
RG =4.7Ω, VGS = 10V
(Resistive Load, see Figure 3)
32
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
14
A
ISDM (2)
Source-drain Current (pulsed)
56
A
VSD (1)
Forward On Voltage
ISD =14A,VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 14 A, di/dt = 100A/µs,
VDD =50 V,Tj = 150°C
(see test circuit, Figure 5)
92
230
5
ns
nC
A
Safe Operating Area For TO-220FP



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