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HCF4512B 数据表(PDF) 5 Page - STMicroelectronics |
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HCF4512B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() HCF4512B 5/9 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. tPHL tPLH Propagation Delay Time Inhibit to Output 5 140 280 ns 10 70 140 15 50 100 tPHL tPLH Propagation Delay Time "A" select to Output 5 200 400 ns 10 85 170 15 60 120 tPHL tPLH Propagation Delay Time Data to Output 5 180 360 ns 10 75 150 15 55 110 tPZL tPLZ tPHZ tPZH 3-State Disable Delay Time 560 120 ns 10 30 60 15 20 40 tTHL tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 TEST SWITCH tPLH, tPHL Open tPZL, tPLZ VDD tPZH, tPHZ VSS |
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