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HCF4517B 数据表(PDF) 5 Page - STMicroelectronics |
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HCF4517B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 8 page ![]() HCF4517B 5/8 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. NOTE : Measured at the point of 10% change in output load of 50pF, RL = 1KΩ to VDD for tPZL, tPLZ and RL = 1KΩ to VSS for tPHZ Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. tPHL tPLH Propagation Delay Time : CL to Bit 16 Tap 5 200 400 ns 10 110 220 15 90 180 tPLZ tPHZ tPZL tPZH 3-State Output WE to Bit 16 Tap (see note) 575 150 ns 10 40 80 15 30 60 tTHL tTLH Output Transition Time 5 100 200 ns 10 50 100 15 40 80 tsetup Setup Time (WRITE ENABLE to CLOCK) 5 -100 -50 ns 10 -50 -25 15 -30 -15 tsetup Setup Time (DATA to CLOCK) 5 -100 -50 ns 10 -60 -30 15 -30 -15 Release Time (WRITE ENABLE to CLOCK) 550 100 ns 10 25 50 15 20 40 thold Hold Time (DATA to CLOCK) 5 100 200 ns 10 50 100 15 25 50 tW Minimum Clock Pulse Width 590 180 ns 10 40 80 15 25 50 fCL Maximum Clock Input Frequency 53 6 MHz 10 6 12 15 8 15 tr tf Maximum Clock Input Rise or Fall Time 5 Unlimited µs 10 15 |
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