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HCF40110B 数据表(PDF) 7 Page - STMicroelectronics |
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HCF40110B 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 10 page ![]() HCF40110B 7/10 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. NOTE : Measured at the point of 10% change in output load of 50pF, RL = 1KΩ to VDD for tPZL, tPLZ and RL = 1KΩ to VSS for tPHZ TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. CLOCK UP/CLOCK DOWN tW Pulse Width 5 85 ns 10 35 15 15 fCL Maximum Frequency 5 2.5 MHz 10 5 15 8 tWC Carry Pulse Width 5 225 ns 10 100 15 70 tWB Borrow Pulse Width 5 260 ns 10 110 15 80 RESET tPLH tPHL Propagation Delay Time Reset to Clock 5750 ns 10 285 15 200 Delay from Reset to First Allowable Clock 5300 ns 10 125 15 75 tW Pulse Width 5 150 ns 10 60 15 40 |
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