STP16NB25FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP16NB25FP

功能描述	N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 9 page

STP16NB25

STP16NB25FP

N - CHANNEL 250V - 0.220

Ω - 16A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.220

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP16NB25

ST P16NB25F P

VDS

Drain-source Voltage (VGS = 0)

250

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

250

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC16

8

A

ID

Drain Current (continuous) at Tc =100

oC10

5

A

IDM (

•)

Drain Current (pulsed)

64

32

A

Ptot

T otal Dissipat ion at Tc =25

oC

140

45

W

Derating Factor

1.12

0.36

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

VISO

I nsulation W ithstand Voltage (DC)

-----

2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P16NB25

ST P16NB25FP

250 V

<0.28

Ω

<0.28

Ω

16 A

8A

1/9

类似零件编号 - STP16NB25FP

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP16NB25FP	318Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP16NB25FP

制造商	部件名	数据表	功能描述
STMicroelectronics	STB16NB25	85Kb / 8P	N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET March 1999
	STP16NS25	330Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET May-2002
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET Oct-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET Apr-2003
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET Sep-2001
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP6NB25	108Kb / 9P	N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET Jun-2000
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999