STP16NE06 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP16NE06

功能描述	N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 9 page

STP16NE06

STP16NE06FP

N - CHANNEL 60V - 0.08

Ω - 16A - TO-220/TO-220FP

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.08

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

175

oC OPERATING TEMPERATURE

s

HIGH dV/dt CAPABILITY

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size"

process whereby a single body is implanted on a

strip layout structure. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP16NE06

STP16NE06FP

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

60

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

o C16

11

A

ID

Drain Current (continuous) at Tc = 100

oC10

7

A

IDM(

•)

Drain Current (pulsed)

64

A

Ptot

Total Dissipation at Tc = 25

oC60

30

W

Derating Factor

0.4

0.2

W/

oC

VISO

Insulation Withstand Voltage (DC)



2000

V

dV/dt

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

’

New RDS (on) spec. starting from JULY 98

TYPE

VDSS

RDS(on)

ID

STP16NE06

STP16NE06FP

60 V

< 0.100

Ω

< 0.100

Ω

16 A

11 A

June 1998

TO-220

TO-220FP

1

2

3

1

2

3

1/9

类似零件编号 - STP16NE06

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP16NE06	371Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP16NE06FP	70Kb / 7P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET Oct-1997
Inchange Semiconductor ...	STP16NE06FP	318Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP16NE06L	70Kb / 7P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET Oct-1997
Inchange Semiconductor ...	STP16NE06L	371Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP16NE06

制造商	部件名	数据表	功能描述
STMicroelectronics	STP16NF06	367Kb / 9P	N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET Apr-2002
	STP16NF06L	337Kb / 9P	N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET Aug-2002
	STP20NE06	104Kb / 9P	N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET Jun-1999
	STP20NE06L	104Kb / 9P	N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET Apr-1999
	STP30NE06	48Kb / 6P	N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET Jan-1999
	STP30NE06L	105Kb / 9P	N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET Mar-1999
	STP36NE06	112Kb / 9P	N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET Jul-1998
	STP60NE06L-16	106Kb / 9P	N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET May-2000
	STP60NF06FP	330Kb / 9P	N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET™ POWER MOSFET Jan-2002
	STP16NF06	325Kb / 14P	N-channel 60V - 0.08Ω - 16A - TO-220/TO-220FP STripFET™II Power MOSFET 20-Feb-2007

More results

STP16NE06 数据表(PDF) 1 Page - STMicroelectronics

STP16NE06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP16NE06

类似说明 - STP16NE06

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STP16NE06 数据表(PDF) 1 Page - STMicroelectronics

STP16NE06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STP16NE06

类似说明 - STP16NE06

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