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STP16NE06L/FP 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP16NE06L/FP
功能描述  N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP16NE06L/FP 数据表(HTML) 2 Page - STMicroelectronics

  STP16NE06L/FP Datasheet HTML 1Page - STMicroelectronics STP16NE06L/FP Datasheet HTML 2Page - STMicroelectronics STP16NE06L/FP Datasheet HTML 3Page - STMicroelectronics STP16NE06L/FP Datasheet HTML 4Page - STMicroelectronics STP16NE06L/FP Datasheet HTML 5Page - STMicroelectronics STP16NE06L/FP Datasheet HTML 6Page - STMicroelectronics STP16NE06L/FP Datasheet HTML 7Page - STMicroelectronics  
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THERMAL DATA
T O-220
T O-220F P
Rthj-ca se
Thermal Resistance Junction-case
Max
2.5
5
oC/W
Rthj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by Tj max,
δ <1%)
16
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =25 V)
80
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS =0
60
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 15V
æ 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID =250
µA2
3
4
V
RDS(on)
St atic Drain-source On
Resistance
VGS =5V
ID =8 A
VGS = 10V
ID =8 A
0.090
0.12
Ω
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on) max
VGS =10 V
16
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on) max
ID =8 A
6
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
800
100
50
pF
pF
pF
STP16NE06L/FP
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