STP19N06L datasheet(1/7 Pages) STMICROELECTRONICS

部件名	STP19N06L

功能描述	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP19N06L

STP19N06LFI

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.085

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

LOGIC LEVEL COMPATIBLE INPUT

s

175

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

RDS(on)

ID

STP19N06L

STP19N06LFI

60 V

< 0.1

Ω

< 0.1

Ω

19 A

13 A

1

2

3

TO-220

ISOWATT220

February 1995

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP19N06L

STP19N06LFI

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)60

V

VGS

Gate-source Voltage

± 15

V

ID

Drain Current (continuous) at T c = 25

oC19

13

A

ID

Drain Current (continuous) at Tc = 100

oC13

9

A

IDM(

•)

Drain Current (pulsed)

76

A

Ptot

Total Dissipation at Tc = 25

oC80

35

W

Derating Factor

0.53

0.23

W/

oC

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

1

2

3

1/7

类似零件编号 - STP19N06L

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STP19N06L	371Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	STP19N06LFI	318Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP19N06L

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