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L6562ADTR 数据表(PDF) 7 Page - STMicroelectronics |
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L6562ADTR 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 26 page ![]() L6562A Electrical characteristics 7/26 Symbol Parameter Test condition Min Typ Max Unit VCOMP Upper clamp voltage ISOURCE = 0.5mA 5.3 5.7 6 V Lower clamp voltage ISINK = 0.5mA (1) 2.12.252.4 V VINVdis Disable threshold 150 200 250 mV VINVen Restart threshold 380 450 520 mV Output overvoltage IOVP Dynamic OVP triggering current 23.5 27 30.5 µA Hys Hysteresis (3) 20 µA Static OVP threshold (1) 2.12.252.4 V Current sense comparator ICS Input bias current VCS = 0 -1 µA tLEB Leading edge blanking 100 200 300 ns td(H-L) Delay to output 175 ns VCS Current sense clamp VCOMP = Upper clamp, Vmult = 1.5V 1.0 1.08 1.16 V Vcsoffset Current sense offset VMULT = 0 25 mV VMULT = 2.5V 5 Zero current detector VZCDH Upper clamp voltage IZCD = 2.5mA 5.0 5.7 6.5 V VZCDL Lower clamp voltage IZCD = - 2.5mA -0.3 0 0.3 V VZCDA Arming voltage (positive-going edge) (3) 1.4 V VZCDT Triggering voltage (negative-going edge) (3) 0.7 V IZCDb Input bias current VZCD = 1 to 4.5V 2µA IZCDsrc Source current capability -2.5 mA IZCDsnk Sink current capability 2.5 mA Starter tSTART Start timer period 75 190 300 µs Table 5. Electrical characteristics (continued) ( -25°C < TJ < +125°C, VCC = 12V, Co = 1nF; unless otherwise specified) |
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