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August 2002

STP19NB20 - STP19NB20FP

STB19NB20-1

N-CHANNEL 200V - 0.15

PowerMESH™ MOSFET

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s

EXTREMELY HIGH dv/dt CAPABILITY

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100% AVALANCHE TESTED

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NEW HIGH VOLTAGE BENCHMARK

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GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

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HIGH CURRENT, HIGH SPEED SWITCHING

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SWITH MODE POWER SUPPLIES (SMPS)

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DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

STP19NB20

STP19NB20FP

STB19NB20-1

200 V

200 V

200 V

< 0.18

Ω

< 0.18

Ω

< 0.18

Ω

19 A

10 A

19 A

Symbol

Parameter

Value

Unit

STP(B)19NB20(-1)

STP19NB20FP

200

V

200

V

Gate- source Voltage

± 30

V

19

10

A

12

6.0

A

Drain Current (pulsed)

76

76

A

125

35

W

Derating Factor

1

0.28

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

Insulation Withstand Voltage (DC)

-

2500

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

TO-220FP

1

2

3

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM