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TS4995 数据表(PDF) 20 Page - STMicroelectronics |
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TS4995 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 26 page ![]() Application information TS4995 20/26 4.5 Decoupling of the circuit Two capacitors are needed to correctly bypass the TS4995: a power supply bypass capacitor CS and a bias voltage bypass capacitor Cb. The CS capacitor has particular influence on the THD+N at high frequencies (above 7 kHz) and an indirect influence on power supply disturbances. With a value for CS of 1 µF, one can expect THD+N performance similar to that shown in the datasheet. In the high frequency region, if CS is lower than 1 µF, then THD+N increases and disturbances on the power supply rail are less filtered. On the other hand, if CS is greater than 1 µF, then those disturbances on the power supply rail are more filtered. The Cb capacitor has an influence on the THD+N at lower frequencies, but also impacts PSRR performance (with grounded input and in the lower frequency region). 4.6 Wake-up time tWU When the standby is released to put the device ON, the bypass capacitor Cb is not charged immediately. Because Cb is directly linked to the bias of the amplifier, the bias will not work properly until the Cb voltage is correct. The time to reach this voltage is called the wake-up time or tWU and is specified in Table 4 on page 5, with Cb=1 µF. During the wake-up phase, the TS4995 gain is close to zero. After the wake-up time, the gain is released and set to its nominal value. If Cb has a value different from 1 µF, then refer to the graph in Figure 57 to establish the corresponding wake-up time. Figure 57. Startup time vs. bypass capacitor 0.00.4 0.81.2 1.62.0 0 5 10 15 Tamb=25 °C Vcc=2.6V Vcc=3.3V Vcc=5V Bypass Capacitor Cb ( μF) |
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