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TYNX40 数据表(PDF) 3 Page - STMicroelectronics |
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TYNX40 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() TYNx40 Series 3/6 Figure 3: Relative variation of thermal impedance versus pulse duration Figure 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t Figure 7: On-state characteristics (maximum values) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Z /R th th] t (s) p Zth(j-c) Zth(j-a) -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 T (°C) j I,I ,I [T ] / GT H L j I ,I ,I [T =25°C] GT H L j IGT IH & IL 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 I (A) TSM Number of cycles Non repetitive T initial=25°C j Repetitive T =95°C C t =10ms p One cycle 0.01 0.10 1.00 10.00 100 1000 5000 I (A), I t (A s) TSM 22 t (ms) p I t 2 ITSM T initial = 25°C j dI/dt limitation 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 500 I (A) TM V (V) TM Tj=max T =25°C j V =0.85V R =10m T max.: j t0 d Ω |
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