STP20NE06FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP20NE06FP

功能描述	N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STP20NE06

STP20NE06FP

N - CHANNEL 60V - 0.06

Ω - 20A TO-220/TO-220FP

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.06

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique

”

Single Feature

Size

™ ” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP20NE06

STP20NE06FP

VDS

Drain-source Volt age (VGS =0)

60

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)60

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC20

13

A

ID

Drain Current (continuous) at Tc =100

oC14

9

A

IDM (

•)

Drain Current (pulsed)

80

A

Ptot

Tot al Dissipation at Tc =25

oC70

30

W

Derating F act or

0.47

0.2

W /

o C

VISO

Insulation Withstand Voltage (DC)



2000

V

dv/dt

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP20NE06

STP20NE06FP

60 V

<0.080

Ω

<0.080

Ω

20 A

13 A

June 1999

TO-220

TO-220FP

1

2

3

1

2

3

1/9

类似零件编号 - STP20NE06FP

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