Z0103MA datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

Z01

Characteristcs

3/9

Figure 1.

Maximum power dissipation

versus RMS on-state current

(full cycle)

Figure 2.

RMS on-state current versus lead

(TO-92) or tab (SOT-223)

temperature (full cycle)

P(W)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.00

0.25

0.50

0.75

1.00

1.25

1.50

(A)

T(RMS)

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(A)

T(RMS)

(SOT-223)

th(j-a)

Rth(j-t)

(TO-92)

th(j-a)

Rth(j-l)

T or

(°C)

Ttab

Figure 3.

RMS on-state current versus

ambient temperature (full cycle)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

(A)

T(RMS)

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

= 60°C/W

(SOT-223)

th(j-a)

= 150°C/W

(TO-92)

th(j-a)

(°C)

amb

K=[Z

th(j-a)

th(j-a)]

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

t (s)

Z01xxA

Z01xxN

Figure 5.

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

Figure 6.

Surge peak on-state current versus

number of cycles

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

I, I , I [T ] /

GTHL

, I , I [T =25°C]

GTHL

T (°C)

IGT

IH &IL

100

1000

One cycle

t=20ms

(A)

TSM

Number of cycles

Non repetitive

T initial = 25°C

Repetitive

= 25°C

amb

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