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STP20NM50FD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP20NM50FD
功能描述  N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh??Power MOSFET with FAST DIODE
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP20NM50FD 数据表(HTML) 3 Page - STMicroelectronics

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STP20NM50FD/STB20NM50FD-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 10A
9S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
1380
290
40
pF
pF
pF
Coss eq. (2)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 400V
130
pF
Rg
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2.8
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =250V, ID =10 A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
22
ns
tr
Rise Time
20
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V, ID = 20A,
VGS =10V
38
18
10
53
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID =20A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
6ns
tf
Fall Time
15
ns
tc
Cross-over Time
30
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
Forward On Voltage
ISD =20A,VGS =0
1.5
V
trr
Reverse Recovery Time
ISD = 20 A, di/dt = 100A/µs,
VDD =60V, Tj = 150°C
(see test circuit, Figure 5)
245
ns
Qrr
Reverse Recovery Charge
2
µC
IRRM
Reverse Recovery Current
16
A



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